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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / IRF3710PBF

IRF3710PBF - THT N channel transistors

IRF3710PBF
Description

Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; TO220AB

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology HEXFET®
Polarisation unipolar
Drain-source voltage 100V
Drain current 57A
Power dissipation 200W
Case TO220AB
Gate-source voltage ±20V
On-state resistance 23mΩ
Mounting THT
Gate charge 86.7nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat