IRF3415PBF - THT N channel transistors

IRF3415PBF
Description

Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO220AB

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology HEXFET®
Polarisation unipolar
Drain-source voltage 150V
Drain current 43A
Power dissipation 200W
Case TO220AB
Gate-source voltage ±20V
On-state resistance 42mΩ
Mounting THT
Gate charge 133.3nC
Kind of package tube
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat