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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / IRF2807PBF

IRF2807PBF - THT N channel transistors

IRF2807PBF
Description

Transistor: N-MOSFET; unipolar; 75V; 82A; 200W; TO220AB

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology HEXFET®
Polarisation unipolar
Drain-source voltage 75V
Drain current 82A
Power dissipation 200W
Case TO220AB
Gate-source voltage ±20V
On-state resistance 13mΩ
Mounting THT
Gate charge 106.7nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat