IRF1404PBF - THT N channel transistors

IRF1404PBF
Description

Транзистор: N-MOSFET; польовий; 40В; 162А; 200Вт; TO220AB

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology HEXFET®
Polarisation unipolar
Drain-source voltage 40V
Drain current 162A
Power dissipation 200W
Case TO220AB
Gate-source voltage ±20V
On-state resistance 4mΩ
Mounting THT
Gate charge 160nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat