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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / IRF135B203

IRF135B203 - THT N channel transistors

IRF135B203
Description

Transistor: N-MOSFET; unipolar; 135V; 91A; Idm: 512A; 441W; TO220AB

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology HEXFET®
Polarisation unipolar
Drain-source voltage 135V
Drain current 91A
Pulsed drain current 512A
Power dissipation 441W
Case TO220AB
Gate-source voltage ±20V
On-state resistance 8.4mΩ
Mounting THT
Gate charge 0.27µC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat