IRF1324PBF - THT N channel transistors

IRF1324PBF
Description

Transistor: N-MOSFET; unipolar; 24V; 353A; 300W; TO220AB

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology HEXFET®
Polarisation unipolar
Drain-source voltage 24V
Drain current 353A
Power dissipation 300W
Case TO220AB
Gate-source voltage ±20V
On-state resistance 1.5mΩ
Mounting THT
Gate charge 160nC
Kind of package tube
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat