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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / IRF1018EPBF

IRF1018EPBF - THT N channel transistors

IRF1018EPBF
Description

Transistor: N-MOSFET; unipolar; 60V; 79A; 110W; TO220AB

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology HEXFET®
Polarisation unipolar
Drain-source voltage 60V
Drain current 79A
Power dissipation 110W
Case TO220AB
Gate-source voltage ±20V
On-state resistance 8.4mΩ
Mounting THT
Gate charge 46nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat