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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / IRF1010EPBF

IRF1010EPBF - THT N channel transistors

IRF1010EPBF
Description

Transistor: N-MOSFET; unipolar; 60V; 81A; 170W; TO220AB

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology HEXFET®
Polarisation unipolar
Drain-source voltage 60V
Drain current 81A
Power dissipation 170W
Case TO220AB
Gate-source voltage ±20V
On-state resistance 12mΩ
Mounting THT
Gate charge 86.6nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat