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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / IPU80R4K5P7AKMA1

IPU80R4K5P7AKMA1 - THT N channel transistors

IPU80R4K5P7AKMA1
Description

Transistor: N-MOSFET; unipolar; 800V; 1A; Idm: 2.6A; 13W; IPAK; ESD

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology CoolMOS™ P7
Polarisation unipolar
Drain-source voltage 800V
Drain current 1A
Pulsed drain current 2.6A
Power dissipation 13W
Case IPAK
Gate-source voltage ±20V
On-state resistance 4.5Ω
Mounting THT
Gate charge 4nC
Kind of channel enhancement
Version ESD
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Development and design: Seventh Cat