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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / IPT012N08N5ATMA1

IPT012N08N5ATMA1 - SMD N channel transistors

IPT012N08N5ATMA1
Description

Transistor: N-MOSFET; unipolar; 80V; 279A; Idm: 1200A; 375W

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology OptiMOS™ 5
Polarisation unipolar
Drain-source voltage 80V
Drain current 279A
Pulsed drain current 1.2kA
Power dissipation 375W
Case PG-HSOF-8
Gate-source voltage ±20V
On-state resistance 1.2mΩ
Mounting SMD
Gate charge 178nC
Kind of package tape
Kind of channel enhancement
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Development and design: Seventh Cat