IPS80R900P7 - THT N channel transistors

IPS80R900P7
Description

Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK SL; ESD

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology CoolMOS™ P7
Polarisation unipolar
Drain-source voltage 800V
Drain current 3.9A
Power dissipation 45W
Case IPAK SL
Gate-source voltage ±20V
On-state resistance 0.9Ω
Mounting THT
Gate charge 15nC
Kind of channel enhancement
Version ESD
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Development and design: Seventh Cat