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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / IPS70R1K4P7S

IPS70R1K4P7S - THT N channel transistors

IPS70R1K4P7S
Description

Transistor: N-MOSFET; unipolar; 700V; 2.5A; 22.7W; IPAK SL; ESD

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology CoolMOS™ P7
Polarisation unipolar
Drain-source voltage 700V
Drain current 2.5A
Power dissipation 22.7W
Case IPAK SL
Gate-source voltage ±16V
On-state resistance 1.4Ω
Mounting THT
Gate charge 4.7nC
Kind of channel enhancement
Version ESD
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Development and design: Seventh Cat