IPP80R360P7 - THT N channel transistors

IPP80R360P7
Description

Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO220-3; ESD

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology CoolMOS™ P7
Polarisation unipolar
Drain-source voltage 800V
Drain current 8.6A
Power dissipation 84W
Case PG-TO220-3
Gate-source voltage ±20V
On-state resistance 0.36Ω
Mounting THT
Gate charge 30nC
Kind of package tube
Kind of channel enhancement
Version ESD
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat