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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / IPP80R1K2P7

IPP80R1K2P7 - THT N channel transistors

IPP80R1K2P7
Description

Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO220-3; ESD

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology CoolMOS™ P7
Polarisation unipolar
Drain-source voltage 800V
Drain current 3.1A
Power dissipation 37W
Case PG-TO220-3
Gate-source voltage ±20V
On-state resistance 1.2Ω
Mounting THT
Gate charge 11nC
Kind of package tube
Kind of channel enhancement
Version ESD
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Development and design: Seventh Cat