IPP60R180P7XKSA1 - THT N channel transistors

IPP60R180P7XKSA1
Description

Транзистор: N-MOSFET; польовий; 650В; 11А; Idm: 53А; 72Вт; ESD

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology CoolMOS™ P7
Polarisation unipolar
Drain-source voltage 650V
Drain current 11A
Pulsed drain current 53A
Power dissipation 72W
Case PG-TO220-3
Gate-source voltage ±20V
On-state resistance 0.18Ω
Mounting THT
Kind of channel enhancement
Version ESD
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Development and design: Seventh Cat