IPP17N25S3100AKSA1 - THT N channel transistors

IPP17N25S3100AKSA1
Description

Transistor: N-MOSFET; OptiMOS™ T; unipolar; 250V; 13.3A; Idm: 68A

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology OptiMOS™ T
Polarisation unipolar
Drain-source voltage 250V
Drain current 13.3A
Pulsed drain current 68A
Power dissipation 107W
Case PG-TO220-3
Gate-source voltage ±20V
On-state resistance 0.1Ω
Mounting THT
Kind of channel enhancement
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Development and design: Seventh Cat