IPP111N15N3GXKSA1 - THT N channel transistors

IPP111N15N3GXKSA1
Description

Transistor: N-MOSFET; unipolar; 150V; 83A; 214W; PG-TO220-3

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology OptiMOS™ 3
Polarisation unipolar
Drain-source voltage 150V
Drain current 83A
Power dissipation 214W
Case PG-TO220-3
Gate-source voltage ±20V
On-state resistance 11.1mΩ
Mounting THT
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat