IPP019N08NF2SAKMA1 - THT N channel transistors

IPP019N08NF2SAKMA1
Description

Transistor: N-MOSFET; unipolar; 80V; 147A; Idm: 764A; 250W

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology StrongIRFET™ 2
Polarisation unipolar
Drain-source voltage 80V
Drain current 147A
Pulsed drain current 764A
Power dissipation 250W
Case PG-TO220-3
Gate-source voltage ±20V
On-state resistance 1.9mΩ
Mounting THT
Gate charge 124nC
Kind of package tube
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat