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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / IPN80R1K4P7

IPN80R1K4P7 - SMD N channel transistors

IPN80R1K4P7
Description

Transistor: N-MOSFET; unipolar; 800V; 2.7A; 7W; PG-SOT223; ESD

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology CoolMOS™ P7
Polarisation unipolar
Drain-source voltage 800V
Drain current 2.7A
Power dissipation 7W
Case PG-SOT223
Gate-source voltage ±20V
On-state resistance 1.4Ω
Mounting SMD
Gate charge 10nC
Kind of package reel
Kind of channel enhancement
Version ESD
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Development and design: Seventh Cat