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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / IPN60R600P7S

IPN60R600P7S - SMD N channel transistors

IPN60R600P7S
Description

Transistor: N-MOSFET; unipolar; 600V; 4A; 7W; PG-SOT223; ESD

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology CoolMOS™ P7
Polarisation unipolar
Drain-source voltage 600V
Drain current 4A
Power dissipation 7W
Case PG-SOT223
Gate-source voltage ±20V
On-state resistance 0.6Ω
Mounting SMD
Gate charge 9nC
Kind of channel enhancement
Version ESD
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Development and design: Seventh Cat