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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / IPI80N06S407AKSA2

IPI80N06S407AKSA2 - THT N channel transistors

IPI80N06S407AKSA2
Description

Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 58A; Idm: 320A

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology OptiMOS® -T2
Polarisation unipolar
Drain-source voltage 60V
Drain current 58A
Pulsed drain current 320A
Power dissipation 79W
Case PG-TO262-3
Gate-source voltage ±20V
On-state resistance 7.4mΩ
Mounting THT
Gate charge 27nC
Kind of channel enhancement
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Development and design: Seventh Cat