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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / IPI086N10N3GXKSA1

IPI086N10N3GXKSA1 - THT N channel transistors

IPI086N10N3GXKSA1
Description

Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO262-3

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology OptiMOS™ 3
Polarisation unipolar
Drain-source voltage 100V
Drain current 80A
Power dissipation 125W
Case PG-TO262-3
Gate-source voltage ±20V
On-state resistance 8.6mΩ
Mounting THT
Kind of channel enhancement
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Development and design: Seventh Cat