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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / IPI076N12N3GAKSA1

IPI076N12N3GAKSA1 - THT N channel transistors

IPI076N12N3GAKSA1
Description

Transistor: N-MOSFET; unipolar; 120V; 100A; 168W; PG-TO262-3

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology OptiMOS™ 3
Polarisation unipolar
Drain-source voltage 120V
Drain current 100A
Power dissipation 168W
Case PG-TO262-3
Gate-source voltage ±20V
On-state resistance 7.6mΩ
Mounting THT
Kind of channel enhancement
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Development and design: Seventh Cat