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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / IPDD60R125G7XTMA1

IPDD60R125G7XTMA1 - SMD N channel transistors

IPDD60R125G7XTMA1
Description

Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 20A; Idm: 54A

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology CoolMOS™ G7
Polarisation unipolar
Drain-source voltage 600V
Drain current 20A
Pulsed drain current 54A
Power dissipation 120W
Case PG-HDSOP-10-1
Gate-source voltage ±20V
On-state resistance 0.125Ω
Mounting SMD
Gate charge 27nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat