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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / IPD80R2K0P7

IPD80R2K0P7 - SMD N channel transistors

IPD80R2K0P7
Description

Transistor: N-MOSFET; unipolar; 800V; 1.9A; 24W; PG-TO252-3; ESD

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology CoolMOS™ P7
Polarisation unipolar
Drain-source voltage 800V
Drain current 1.9A
Power dissipation 24W
Case PG-TO252-3
Gate-source voltage ±20V
On-state resistance 2Ω
Mounting SMD
Gate charge 9nC
Kind of channel enhancement
Version ESD
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Development and design: Seventh Cat