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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / IPD80R1K0CEATMA1

IPD80R1K0CEATMA1 - SMD N channel transistors

IPD80R1K0CEATMA1
Description

Transistor: N-MOSFET; unipolar; 800V; 5.7A; 83W; PG-TO252-3

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology CoolMOS™ CE
Polarisation unipolar
Drain-source voltage 800V
Drain current 5.7A
Power dissipation 83W
Case PG-TO252-3
Gate-source voltage ±20V
On-state resistance 1Ω
Mounting SMD
Kind of channel enhancement
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Development and design: Seventh Cat