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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / IPD60R650CEAUMA1

IPD60R650CEAUMA1 - SMD N channel transistors

IPD60R650CEAUMA1
Description

Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 19A; 82W

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology CoolMOS™ CE
Polarisation unipolar
Drain-source voltage 600V
Drain current 6.2A
Pulsed drain current 19A
Power dissipation 82W
Case PG-TO252-3
Gate-source voltage ±20V
On-state resistance 0.65Ω
Mounting SMD
Gate charge 20.5nC
Kind of channel enhancement
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Development and design: Seventh Cat