IPD60R280P7 - SMD N channel transistors

IPD60R280P7
Description

Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3; ESD

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology CoolMOS™ P7
Polarisation unipolar
Drain-source voltage 600V
Drain current 8A
Power dissipation 53W
Case PG-TO252-3
Gate-source voltage ±20V
On-state resistance 0.28Ω
Mounting SMD
Gate charge 18nC
Kind of channel enhancement
Version ESD
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat