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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / IPD50P04P4L11ATMA2

IPD50P04P4L11ATMA2 - SMD P channel transistors

IPD50P04P4L11ATMA2
Description

Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -40A; 58W

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor P-MOSFET
Technology OptiMOS® -P2
Polarisation unipolar
Drain-source voltage -40V
Drain current -40A
Pulsed drain current -200A
Power dissipation 58W
Case PG-TO252-3-313
Gate-source voltage -16...5V
On-state resistance 10.6mΩ
Mounting SMD
Gate charge 14nC
Kind of channel enhancement
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Development and design: Seventh Cat