IPD50N06S4L12 - SMD N channel transistors

IPD50N06S4L12
Description

Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 60V; 36A; 50W

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology OptiMOS™ T2
Polarisation unipolar
Drain-source voltage 60V
Drain current 36A
Power dissipation 50W
Case PG-TO252-3
Gate-source voltage ±16V
On-state resistance 12mΩ
Mounting SMD
Gate charge 30nC
Kind of channel enhancement
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Development and design: Seventh Cat