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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / IPD350N06LGBTMA1

IPD350N06LGBTMA1 - SMD N channel transistors

IPD350N06LGBTMA1
Description

Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 116A; 68W; PG-TO252-3

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology OptiMOS™ 3
Polarisation unipolar
Drain-source voltage 60V
Drain current 20A
Pulsed drain current 116A
Power dissipation 68W
Case PG-TO252-3
Gate-source voltage ±20V
On-state resistance 35mΩ
Mounting SMD
Gate charge 13nC
Kind of channel enhancement
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Development and design: Seventh Cat