IPD135N03LGATMA1 - SMD N channel transistors

IPD135N03LGATMA1
Description

Transistor: N-MOSFET; unipolar; 30V; 21A; 31W; PG-TO252-3

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology OptiMOS™ 3
Polarisation unipolar
Drain-source voltage 30V
Drain current 21A
Power dissipation 31W
Case PG-TO252-3
Gate-source voltage ±20V
On-state resistance 13.5mΩ
Mounting SMD
Kind of channel enhancement
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Development and design: Seventh Cat