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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / IPD082N10N3GATMA1

IPD082N10N3GATMA1 - SMD N channel transistors

IPD082N10N3GATMA1
Description

Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO252-3

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology OptiMOS™ 3
Polarisation unipolar
Drain-source voltage 100V
Drain current 80A
Power dissipation 125W
Case PG-TO252-3
Gate-source voltage ±20V
On-state resistance 8.2mΩ
Mounting SMD
Kind of channel enhancement
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Development and design: Seventh Cat