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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / IPD068P03L3GATMA1

IPD068P03L3GATMA1 - SMD P channel transistors

IPD068P03L3GATMA1
Description

Transistor: P-MOSFET; unipolar; -30V; -70A; 100W; PG-TO252-3

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor P-MOSFET
Technology OptiMOS™ P3
Polarisation unipolar
Drain-source voltage -30V
Drain current -70A
Power dissipation 100W
Case PG-TO252-3
Gate-source voltage ±20V
On-state resistance 11mΩ
Mounting SMD
Kind of channel enhancement
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Development and design: Seventh Cat