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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / IPB80N06S2L07

IPB80N06S2L07 - SMD N channel transistors

IPB80N06S2L07
Description

Transistor: N-MOSFET; unipolar; 55V; 80A; 210W; PG-TO263-3

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology OptiMOS™
Polarisation unipolar
Drain-source voltage 55V
Drain current 80A
Power dissipation 210W
Case PG-TO263-3
Gate-source voltage ±20V
On-state resistance 6.7mΩ
Mounting SMD
Gate charge 95nC
Kind of channel enhancement
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Development and design: Seventh Cat