Found: products for your request ''
Show all results
No results found for your query. Try changing the search criteria.
Sign In
0
Home
About Us
Delivery and Payment
Contacts
Our Brands
Warehouse Stock
Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / IPB180N04S4H0

IPB180N04S4H0 - SMD N channel transistors

IPB180N04S4H0
Description

Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 180A; 250W

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology OptiMOS™ T2
Polarisation unipolar
Drain-source voltage 40V
Drain current 180A
Power dissipation 250W
Case PG-TO263-7
Gate-source voltage ±20V
On-state resistance 1.1mΩ
Mounting SMD
Gate charge 173nC
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat