IPB117N20NFDATMA1 - SMD N channel transistors

IPB117N20NFDATMA1
Description

Transistor: N-MOSFET; unipolar; 200V; 84A; 300W; PG-TO263-3

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology OptiMOS™ FD
Polarisation unipolar
Drain-source voltage 200V
Drain current 84A
Power dissipation 300W
Case PG-TO263-3
Gate-source voltage ±20V
On-state resistance 11.7mΩ
Mounting SMD
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat