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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / IPB038N12N3GATMA1

IPB038N12N3GATMA1 - SMD N channel transistors

IPB038N12N3GATMA1
Description

Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO263-3

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology OptiMOS™
Polarisation unipolar
Drain-source voltage 120V
Drain current 120A
Power dissipation 300W
Case PG-TO263-3
Gate-source voltage ±20V
On-state resistance 3.8mΩ
Mounting SMD
Kind of channel enhancement
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Development and design: Seventh Cat