Found: products for your request ''
Show all results
No results found for your query. Try changing the search criteria.
Sign In
0
Home
About Us
Delivery and Payment
Contacts
Our Brands
Warehouse Stock
Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / IPB025N10N3GATMA1

IPB025N10N3GATMA1 - SMD N channel transistors

IPB025N10N3GATMA1
Description

Transistor: N-MOSFET; unipolar; 100V; 180A; 300W; PG-TO263-7

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology OptiMOS™ 3
Polarisation unipolar
Drain-source voltage 100V
Drain current 180A
Power dissipation 300W
Case PG-TO263-7
Gate-source voltage ±20V
On-state resistance 2.5mΩ
Mounting SMD
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat