IPA057N08N3GXKSA1 - THT N channel transistors

IPA057N08N3GXKSA1
Description

Транзистор: N-MOSFET; польовий; 80В; 60А; 39Вт; TO220FP

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology OptiMOS™ 3
Polarisation unipolar
Drain-source voltage 80V
Drain current 60A
Power dissipation 39W
Case TO220FP
Gate-source voltage ±20V
On-state resistance 5.7mΩ
Mounting THT
Kind of package tube
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat