IMZA65R048M1HXKSA1 - THT N channel transistors

IMZA65R048M1HXKSA1
Description

Transistor: N-MOSFET; SiC; unipolar; 650V; 24A; Idm: 100A; 125W

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology CoolSiC™
SiC
Polarisation unipolar
Drain-source voltage 650V
Drain current 24A
Pulsed drain current 100A
Power dissipation 125W
Case TO247-4
Gate-source voltage -5...23V
On-state resistance 63mΩ
Mounting THT
Kind of package tube
Kind of channel enhancement
Features of semiconductor devices Kelvin terminal
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Development and design: Seventh Cat