IMZ120R030M1HXKSA1 - THT N channel transistors

IMZ120R030M1HXKSA1
Description

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 150A; 114W

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology CoolSiC™
SiC
Polarisation unipolar
Drain-source voltage 1.2kV
Drain current 45A
Pulsed drain current 150A
Power dissipation 114W
Case TO247-4
Gate-source voltage -7...23V
On-state resistance 57mΩ
Mounting THT
Kind of package tube
Kind of channel enhancement
Features of semiconductor devices Kelvin terminal
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Development and design: Seventh Cat