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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / IMW65R072M1HXKSA1

IMW65R072M1HXKSA1 - THT N channel transistors

IMW65R072M1HXKSA1
Description

Transistor: N-MOSFET; SiC; unipolar; 650V; 18A; Idm: 69A; 96W; TO247

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology CoolSiC™
SiC
Polarisation unipolar
Drain-source voltage 650V
Drain current 18A
Pulsed drain current 69A
Power dissipation 96W
Case TO247
Gate-source voltage -5...23V
On-state resistance 94mΩ
Mounting THT
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat