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Home / Catalog / TME catalog / Semiconductors / Transistors / IGBT transistors and modules / IGBT transistors / SMD IGBT transistors / IKB10N60TATMA1

IKB10N60TATMA1 - SMD IGBT transistors

IKB10N60TATMA1
Description

Transistor: IGBT; 600V; 18A; 110W; D2PAK

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor IGBT
Technology TRENCHSTOP™
Collector-emitter voltage 600V
Collector current 18A
Power dissipation 110W
Case D2PAK
Gate-emitter voltage ±20V
Pulsed collector current 30A
Mounting SMD
Gate charge 62nC
Kind of package reel
tape
Turn-on time 20ns
Turn-off time 253ns
Features of semiconductor devices integrated anti-parallel diode
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Development and design: Seventh Cat