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Home / Catalog / TME catalog / Semiconductors / Transistors / IGBT transistors and modules / IGBT transistors / THT IGBT transistors / IHW50N65R5XKSA1

IHW50N65R5XKSA1 - THT IGBT transistors

IHW50N65R5XKSA1
Description

Transistor: IGBT; 650V; 50A; 141W; TO247-3

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor IGBT
Technology TRENCHSTOP™ 5
Collector-emitter voltage 650V
Collector current 50A
Power dissipation 141W
Case TO247-3
Gate-emitter voltage ±20V
Pulsed collector current 150A
Mounting THT
Gate charge 230nC
Kind of package tube
Turn-on time 50ns
Turn-off time 218ns
Features of semiconductor devices reverse conducting IGBT (RC-IGBT)
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Development and design: Seventh Cat