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Home / Catalog / TME catalog / Semiconductors / Transistors / IGBT transistors and modules / IGBT transistors / THT IGBT transistors / IHW40N65R6XKSA1

IHW40N65R6XKSA1 - THT IGBT transistors

IHW40N65R6XKSA1
Description

Transistor: IGBT; 650V; 54A; 105W; TO247-3

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor IGBT
Collector-emitter voltage 650V
Collector current 54A
Power dissipation 105W
Case TO247-3
Gate-emitter voltage ±20V
Pulsed collector current 120A
Mounting THT
Gate charge 159nC
Kind of package tube
Turn-on time 36ns
Turn-off time 256ns
Features of semiconductor devices reverse conducting IGBT (RC-IGBT)
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Development and design: Seventh Cat