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Home / Catalog / TME catalog / Semiconductors / Transistors / IGBT transistors and modules / IGBT transistors / SMD IGBT transistors / IGB50N65S5ATMA1

IGB50N65S5ATMA1 - SMD IGBT transistors

IGB50N65S5ATMA1
Description

Transistor: IGBT; 650V; 63A; 135W; D2PAK

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor IGBT
Technology TRENCHSTOP™ 5
Collector-emitter voltage 650V
Collector current 63A
Power dissipation 135W
Case D2PAK
Gate-emitter voltage ±20V
Pulsed collector current 200A
Mounting SMD
Gate charge 0.12µC
Kind of package reel
tape
Turn-on time 50ns
Turn-off time 199ns
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Development and design: Seventh Cat