HUF75645P3 - THT N channel transistors

HUF75645P3
Description

Transistor: N-MOSFET; unipolar; 100V; 65A; 310W; TO220AB

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Technology UltraFET®
Polarisation unipolar
Drain-source voltage 100V
Drain current 65A
Power dissipation 310W
Case TO220AB
Gate-source voltage ±20V
On-state resistance 14mΩ
Mounting THT
Gate charge 238nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat