HUF75639P3 - THT N channel transistors

HUF75639P3
Description

Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO220AB

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Technology UltraFET®
Polarisation unipolar
Drain-source voltage 100V
Drain current 56A
Power dissipation 200W
Case TO220AB
Gate-source voltage ±20V
On-state resistance 25mΩ
Mounting THT
Gate charge 130nC
Kind of package tube
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat