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Home / Catalog / TME catalog / Semiconductors / Transistors / IGBT transistors and modules / IGBT transistors / THT IGBT transistors / GT50JR22

GT50JR22 - THT IGBT transistors

GT50JR22
Description

Transistor: IGBT; 600V; 44A; 115W; TO3PN

Specifications
Manufacturer TOSHIBA
Type of transistor IGBT
Collector-emitter voltage 600V
Collector current 44A
Power dissipation 115W
Case TO3PN
Gate-emitter voltage ±25V
Pulsed collector current 100A
Mounting THT
Kind of package tube
Turn-on time 250ns
Turn-off time 330ns
Features of semiconductor devices integrated anti-parallel diode
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Development and design: Seventh Cat